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The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a semiconductor device using a self-alignment-type gate by embedding the gate electrode in the first gate insulating film and the second gate insulating film.
2. Background of the Invention
In the case of a semiconductor device, in order to operate stably by preventing the malfunction due to the leakage current at an interface between a first gate insulating film and a gate electrode, it is preferable that the gate electrode is embedded in the first gate insulating film or the second gate insulating film.
In a semiconductor device fabricating method, a semiconductor device including a MOS transistor using a self-alignment-type gate is formed by embedding the gate electrode in the first gate insulating film and the second gate insulating film. In this case, the first gate insulating film and the second gate insulating film are formed in an island-like shape, and the gate electrode is embedded only in the side surfaces of the island-like gate insulating films.
As the semiconductor device of this type, a method is known in which an element separation film is formed above a semiconductor layer by means of an element separation method such
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